Interactions between stacked layers of phenyl-modified silicene
نویسندگان
چکیده
منابع مشابه
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15–25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to ...
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There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases in physical thickness proportional to K, and therefore would significantly reduce direct tunneling. However, increases in k to values of 15–25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect t...
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ژورنال
عنوان ژورنال: New Journal of Physics
سال: 2013
ISSN: 1367-2630
DOI: 10.1088/1367-2630/15/12/125018